Fig. 3From: Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer DepositionThe statistical results of distribution of the set and reset voltages measured from a single device unit for 200 times tests. a Pt/HfO2/TiO2/HfO2/Pt. b Pt/HfO2/TiO2/HfO2/TiN. The I–V curves of 10 randomly selected device units. c Pt/HfO2/TiO2/HfO2/Pt. d Pt/HfO2/TiO2/HfO2/TiNBack to article page