Fig. 5From: Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer DepositionThe typical I–V curves plotted in double-logarithmic scale of a Pt/HfO2/TiO2/HfO2/Pt and b Pt/HfO2/TiO2/HfO2/TiNBack to article page