Fig. 6From: Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer DepositionNarrow-scan XPS spectra from trilayer-structure of HfO2/TiO2/HfO2 on TiN-coated Si. a Hf 4f, b Ti 2p peaks of HfO2/TiO2/HfO2. O 1s peaks of c HfO2 and d TiO2 layersBack to article page