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Fig. 7 | Nanoscale Research Letters

Fig. 7

From: Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

Fig. 7

XPS depth profiles of HfO2/TiO2/HfO2 on Pt- and TiN-coated Si by Ar ion etching. a HfO2/TiO2/HfO2 on Pt-coated Si. b HfO2/TiO2/HfO2 on TiN-coated Si. The depth distribution of oxygen vacancy concentration (V O 2+/O) determined from XPS spectra for HfO2/TiO2/HfO2 on Pt- and TiN-coated Si. c HfO2/TiO2/HfO2 on Pt-coated Si. d HfO2/TiO2/HfO2 on TiN-coated Si

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