Fig. 7From: Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer DepositionXPS depth profiles of HfO2/TiO2/HfO2 on Pt- and TiN-coated Si by Ar ion etching. a HfO2/TiO2/HfO2 on Pt-coated Si. b HfO2/TiO2/HfO2 on TiN-coated Si. The depth distribution of oxygen vacancy concentration (V O 2+/O) determined from XPS spectra for HfO2/TiO2/HfO2 on Pt- and TiN-coated Si. c HfO2/TiO2/HfO2 on Pt-coated Si. d HfO2/TiO2/HfO2 on TiN-coated SiBack to article page