Fig. 4From: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on SapphireSimulations of the IR reflectance spectra with different number of layers. The experimental spectrum of the investigated n+/n0/n+-GaN structure is shown by solid line. a Reststrahlen region. b The enlarged spectra in the range above 750 cm−1 Back to article page