Fig. 6From: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on SapphireExperimental (solid line) and best-fit calculated (dash-dot line) IR reflectance spectra of the n+/n0/n+-GaN structure grown on GaN-template/Al2O3. a Reststrahlen region. b Interference regionBack to article page