Fig. 7From: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on SapphireExperimental (solid line) IR reflectance spectra of the investigated n+/n0/n+-GaN structure and calculated reflectance spectra of 6.78-μm-thick GaN layer on sapphire (dash-dot line) and bulk GaN (dash line)Back to article page