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Table 1 Best fit oscillator parameters for GaN layers of the investigated structure (layers are numbered from top to bottom)

From: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire

Layer no. ωLO (cm-1) γLO (cm−1) ωTO (cm−1) γTO (cm−1) ωp (cm−1) γp (cm−1) dIR (μm) dNominal (μm) ε
1 740.2 (±0.5) 10.7 (±1.1) 561.1 (±0.8) 15.7 (±0.9) 507.8 (±1.2) 350.5 (±1.0) 0.47 (±0.02) 0.401 5.25 (±0.07)
2 740.7 (±0.8) 12.8 (±0.9) 560.8 (±0.2) 14.4 (±0.5) 55.7 (±0.5) 155.7 (±0.5) 1.73 (±0.06) 1.752 5.01 (±0.03)
3 740.4 (±0.3) 11.4 (±1.0) 562.3 (±0.4) 6.83 (±0.5) 537.1 (±0.9) 390 (±0.7) 0.8 (±0.02) 0.82 5.35 (±0.08)
4 740.1 (±0.7) 6.22 (±0.7) 560.7 (±0.1) 17.8 (±0.5) 132.3 (±0.5) 249.1 (±0.5) 0.27 (±0.03) 0.31 5.35 (±0.1)
5 742.1 (±0.2) 8.68 (±0.8) 560.4 (±0.7) 18.4 (±0.5) 436.1 (±0.7) 383.3 (±0.5) 0.01a (±0.001) - 5.3 (±0.09)
Template 741.5 (±1.0) 13.14 (±1.3) 560.2 (±0.3) 7.16 (±0.1) 51.39 (±0.8) 180 (±0.9) 3.48 (±0.05) 3.51 4.99 (±0.07)
  1. aThickness of interface layer was not determined from SEM data