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Table 1 Best fit oscillator parameters for GaN layers of the investigated structure (layers are numbered from top to bottom)

From: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire

Layer no.

ωLO (cm-1)

γLO (cm−1)

ωTO (cm−1)

γTO (cm−1)

ωp (cm−1)

γp (cm−1)

dIR (μm)

dNominal (μm)

ε

1

740.2 (±0.5)

10.7 (±1.1)

561.1 (±0.8)

15.7 (±0.9)

507.8 (±1.2)

350.5 (±1.0)

0.47 (±0.02)

0.401

5.25 (±0.07)

2

740.7 (±0.8)

12.8 (±0.9)

560.8 (±0.2)

14.4 (±0.5)

55.7 (±0.5)

155.7 (±0.5)

1.73 (±0.06)

1.752

5.01 (±0.03)

3

740.4 (±0.3)

11.4 (±1.0)

562.3 (±0.4)

6.83 (±0.5)

537.1 (±0.9)

390 (±0.7)

0.8 (±0.02)

0.82

5.35 (±0.08)

4

740.1 (±0.7)

6.22 (±0.7)

560.7 (±0.1)

17.8 (±0.5)

132.3 (±0.5)

249.1 (±0.5)

0.27 (±0.03)

0.31

5.35 (±0.1)

5

742.1 (±0.2)

8.68 (±0.8)

560.4 (±0.7)

18.4 (±0.5)

436.1 (±0.7)

383.3 (±0.5)

0.01a (±0.001)

-

5.3 (±0.09)

Template

741.5 (±1.0)

13.14 (±1.3)

560.2 (±0.3)

7.16 (±0.1)

51.39 (±0.8)

180 (±0.9)

3.48 (±0.05)

3.51

4.99 (±0.07)

  1. aThickness of interface layer was not determined from SEM data

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