Table 1 Best fit oscillator parameters for GaN layers of the investigated structure (layers are numbered from top to bottom)
From: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire
Layer no. | ωLO (cm-1) | γLO (cm−1) | ωTO (cm−1) | γTO (cm−1) | ωp (cm−1) | γp (cm−1) | dIR (μm) | dNominal (μm) | ε∞ |
---|---|---|---|---|---|---|---|---|---|
1 | 740.2 (±0.5) | 10.7 (±1.1) | 561.1 (±0.8) | 15.7 (±0.9) | 507.8 (±1.2) | 350.5 (±1.0) | 0.47 (±0.02) | 0.401 | 5.25 (±0.07) |
2 | 740.7 (±0.8) | 12.8 (±0.9) | 560.8 (±0.2) | 14.4 (±0.5) | 55.7 (±0.5) | 155.7 (±0.5) | 1.73 (±0.06) | 1.752 | 5.01 (±0.03) |
3 | 740.4 (±0.3) | 11.4 (±1.0) | 562.3 (±0.4) | 6.83 (±0.5) | 537.1 (±0.9) | 390 (±0.7) | 0.8 (±0.02) | 0.82 | 5.35 (±0.08) |
4 | 740.1 (±0.7) | 6.22 (±0.7) | 560.7 (±0.1) | 17.8 (±0.5) | 132.3 (±0.5) | 249.1 (±0.5) | 0.27 (±0.03) | 0.31 | 5.35 (±0.1) |
5 | 742.1 (±0.2) | 8.68 (±0.8) | 560.4 (±0.7) | 18.4 (±0.5) | 436.1 (±0.7) | 383.3 (±0.5) | 0.01a (±0.001) | - | 5.3 (±0.09) |
Template | 741.5 (±1.0) | 13.14 (±1.3) | 560.2 (±0.3) | 7.16 (±0.1) | 51.39 (±0.8) | 180 (±0.9) | 3.48 (±0.05) | 3.51 | 4.99 (±0.07) |