Table 2 Optically determined values of carrier concentration and mobility for each analyzed GaN layer of the investigated n+/n0/n+-GaN structure
From: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire
Layer no. | N × 1017 (cm−1) | μ (cm2V−1s−1) |
|---|---|---|
1 | 28.8 (±0.13) | 133.3 (±1.20) |
2 | 0.37 (±0.01) | 300.0 (±0.90) |
3 | 34.4 (±0.12) | 119.7 (±0.75) |
4 | 2.04 (±0.03) | 187.4 (±0.67) |
5 | 22.20 (±0.07) | 121.9 (±0.52) |
Template | 0.31 (±0.01) | 259.4 (±1.27) |