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Table 2 Optically determined values of carrier concentration and mobility for each analyzed GaN layer of the investigated n+/n0/n+-GaN structure

From: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire

Layer no. N × 1017 (cm−1) μ (cm2V−1s−1)
1 28.8 (±0.13) 133.3 (±1.20)
2 0.37 (±0.01) 300.0 (±0.90)
3 34.4 (±0.12) 119.7 (±0.75)
4 2.04 (±0.03) 187.4 (±0.67)
5 22.20 (±0.07) 121.9 (±0.52)
Template 0.31 (±0.01) 259.4 (±1.27)