Fig. 1From: Retention Model of TaO/HfO x and TaO/AlO x RRAM with Self-Rectifying Switch CharacteristicsCell schematic plots with thickness information for a TaO/HfO x devices and b TaO/AlO x devices. Both plots describe devices for which PVD deposited the TaO layers with LTPO processes, and the bottom TiON interfacial layers were formed by plasma oxidation during photoresist removalBack to article page