Fig. 1From: Bismuth Quantum Dots in Annealed GaAsBi/AlAs Quantum WellsSTEM image of the A-sample with three 10 nm-thick and one 20 nm-thick GaAsBi QWs grown by MBE and 20 nm-thick MEE-grown AlAs barriers after annealing at 750 °C temperature for 180 sBack to article page