Fig. 2From: Self-Catalyzed Growth of Vertical GaSb Nanowires on InAs Stems by Metal-Organic Chemical Vapor DepositionThe 80°-tilted SEM images of the GaSb nanowires grown on InAs stems at a 480 °C, b 500 °C, c 520 °C, and d 545 °C for 20 min. The growth conditions of the InAs nanowire stems were kept constant. Insets in b and c show higher magnification SEM images. The red circles in d mark the residual InAs stemsBack to article page