Fig. 4From: Self-Catalyzed Growth of Vertical GaSb Nanowires on InAs Stems by Metal-Organic Chemical Vapor DepositionThe 80°-tilted SEM images of the GaSb nanowires grown without InAs stems (a), and on the short InAs stems (b, c). The GaSb nanowires shown in a and b were grown at 500 °C, while the GaSb nanowires in c were grown at 520 °C. Insets in b and c show higher magnification SEM imagesBack to article page