Fig. 6

a The illustration of the axial InAs/GaSb heterostructure nanowires and a low-magnification TEM image of a grown InAs/GaSb nanowire grown at 520 °C. b EDS line scan along the red line marked in (a). c–f EDS compositional maps of the nanowire in (a), showing the Ga, Sb, In, and As distribution. Two spots in a mark the positions where EDS point analyses were performed