Fig. 3
From: Change in Surface Conductivity of Elastically Deformed p-Si Crystals Irradiated by X-Rays
Dependence of longitudinal resistance of irradiated (D = 130 Gy) dislocation-free sample of silicon during elastic deformation with a growing strength of compression at a speed of 8 μm/min (a) and 32 μm/min (b)