Fig. 1From: Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contactsX-ray diffraction spectra of AZO films deposited directly on p-GaN substrate by PAD method in different temperature. a 500 °C; b 600 °C; c 700 °C and d 800 °C. The inner graphs of (a) and (b) show the rocking curve of the 002 diffraction peak of AZOBack to article page