Fig. 3From: Infrared Properties and Terahertz Wave Modulation of Graphene/MnZn Ferrite/p-Si HeterojunctionsCharacterization of sputtered MnZn thin films. (a) XRD patterns and (b) hysteresis loops of MnZn thin films annealed at 350, 450, 550, 650, and 750 °C. Saturation magnetization (Ms) of the MnZn thin films when annealed under the pressure from 0.0 Pa to 4.5 Pa in (c) and temperature from 450 to 700 °C in (d)Back to article page