Fig. 4From: Infrared Properties and Terahertz Wave Modulation of Graphene/MnZn Ferrite/p-Si HeterojunctionsIR characterization. (a) and (b) Isd-Vsg curves of the GFET with MnZn ferrite thin film sputtered at 100 and 150 W, respectively. (c) and (d) compare the Isd-Vsg curves under IR illumination and no illumination. The voltage applied between source and drain is 1.0 V for all curvesBack to article page