Fig. 2
From: Amorphous Silicon Nanowires Grown on Silicon Oxide Film by Annealing
Thermal processing conditions for SiNW synthesis using a horizontal furnace. In stage I, the temperature was increased from room temperature to 400 °C in 1 h with the same Ar flow which used to exclude air. In stage II, Ar flow was adjusted to 100 sccm, and 20 sccm H2 was added. It took 2 h to reach 1080 °C. In this stage, copper patterns changed into hemispheres. Then, temperature was held for 30 min with 1000 sccm Ar and 40 sccm H2 in stage III. After turning off the furnace, the fast cooling process only 10 min was taken as the IV stage and the flow was adjusted to 500 and 20 sccm respectively. In the last stage, slow cooling used to decrease the furnace temperature to room temperature with 100 sccm Ar and 20 sccm H2