Fig. 4
From: Amorphous Silicon Nanowires Grown on Silicon Oxide Film by Annealing
TEM images of nanowires. a TEM image of the tip part of nanowire. Inset photos were the selected area electron diffraction (SAED) of nanowire and the EDS spectrum respectively. The SAED pattern was obtained from the middle of the wire (white circle) in Fig. 4, and the aperture for SAED was 200 nm. b TEM image of nanowire. The inserted image was the detailed photo of nanowire in Fig. 4b