Fig. 2
From: Temperature dependence of band gap in MoSe2 grown by molecular beam epitaxy
Optical spectra of the 1, 2.5, and 16 ML of MoSe2 films. a–c Real part of the dielectric function (ε 1). d–f Imaginary part of the dielectric function (ε 2). g–i Absorption coefficient (α) for the case of direct band gap (g) and indirect band gap (h, i). The peaks labeled A and B in d–i correspond to the direct excitonic transition at the K point in momentum space. All the measurements are performed in UHV at room temperature, except the 16-ML MoSe2 film measured both in UHV and air