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Fig. 4 | Nanoscale Research Letters

Fig. 4

From: Temperature dependence of band gap in MoSe2 grown by molecular beam epitaxy

Fig. 4

a T dec of MoSe2 bulk and thin films in air or UHV conditions. Red squares are from the temperature-dependent optical spectra on the MoSe2 epitaxial films, while black solid and dashed lines correspond to the bulk MoSe2 in UHV [47] and air [46] condition in the literatures. b Temperature dependence of the A exciton peaks in imaginary part of dielectric functions in Fig. 3dā€“f. Black open circles indicate the A exciton peak values of the exfoliated 1-ML MoSe2 taken in the previous report [26]. c Temperature dependence of the optical band gap values for the 1, 2.5, and 16 ML of MoSe2 films, taken from the absorption spectra

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