Table 1 Exciton peak energies and the fitting parameters from Eq. (1) for the 1, 2.5, and 16 ML of MoSe2 films
From: Temperature dependence of band gap in MoSe2 grown by molecular beam epitaxy
Layer thickness (ML) | A exciton (eV, 300 K) | B exciton (eV, 300 K) | E g(300 K) (eV) | Electron-phonon coupling (S) | E g(0) (eV) | Average phonon energy (meV) |
|---|---|---|---|---|---|---|
1 | 1.54 | 1.75 | 2.18 | 3.5 | 2.32 | 11.6 |
2.5 | 1.53 | 1.76 | 1.54 | 3 | 1.68 | |
16 | 1.54 | 1.76 | 1.40 | 4 | 1.50 |