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Fig. 4 | Nanoscale Research Letters

Fig. 4

From: Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy

Fig. 4

In the interface region, O replacing N in the Ga–N bond results in a Ga-rich layer and a GaO x layer. The Ga-rich layer acts as the GaN-to-GaO x transition layer. The Ga–O formation eliminates the polarization of GaN and acts as positive charges. As a result, the conduction band bends gradually from upward to downward and the BE varies accordingly

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