Fig. 1From: Optical and Electronic Properties of Femtosecond Laser-Induced Sulfur-Hyperdoped Silicon N+/P Photodiodes a–c Dependence of absorptance on different fabrication process with various implantation doses. d Impurity band located within bandgap of Si facilitates generation of carriers which participate in absorption of lower energy photons. e Scanning electron micrograph of silicon spikes. f Illustration of optical path on microstructured surfaceBack to article page