Fig. 2From: Optical and Electronic Properties of Femtosecond Laser-Induced Sulfur-Hyperdoped Silicon N+/P Photodiodes a Dependence of absorptance on different ion-implantation dose. All samples were microstructured by PLM. b Electronic properties of reference silicon and microstructured silicon for different ion-implantation dose before annealing and one after annealingBack to article page