Fig. 4
From: The Programming Optimization of Capacitorless 1T DRAM Based on the Dual-Gate TFET
Potential contours after a writing “1” and b writing “0” when the absolute value of Gate2 voltage is 1.3 V. a, b The potential contours after writing “1” and writing “0”, respectively. The potential contours in this figure are extracted when the absolute value of Gate2 voltage is set to 1.3 V