Fig. 4From: The Programming Optimization of Capacitorless 1T DRAM Based on the Dual-Gate TFETPotential contours after a writing “1” and b writing “0” when the absolute value of Gate2 voltage is 1.3 V. a, b The potential contours after writing “1” and writing “0”, respectively. The potential contours in this figure are extracted when the absolute value of Gate2 voltage is set to 1.3 VBack to article page