Tuning the Surface Morphologies and Properties of ZnO Films by the Design of Interfacial Layer

Table 1 Detailed growth conditions for the ZnO films

Samples	Growth processes and detailed parameters
ZnO-P	a) T = 490 °C, P(O₂) = 5 × 10⁻⁵ Torr, O-plasma = 250 W, t = 60 min b) ------ c) T = 250 °C, P(O₂) = 1 × 10⁻⁵ Torr, O-plasma = 180 W, Zn = 330 °C, t = 5 min d) T = 420 °C, P(O₂) = 1 × 10⁻⁵ Torr, O-plasma = 180 W, Zn = 330 °C, t = 90 min
ZnO-R1	a) T = 490 °C, P(O₂) = 5 × 10⁻⁵ Torr, O-plasma = 250 W, t = 60 min b) T = 315 °C, P(O₂) = 5 × 10⁻⁵ Torr, T(Zn) = 310 °C, t = 30 min c) T = 250 °C, P(O₂) = 1 × 10⁻⁵ Torr, O-plasma = 180 W, Zn = 330 °C, t = 5 min d) T = 420 °C, P(O₂) = 1 × 10⁻⁵ Torr, O-plasma = 180 W, Zn = 330 °C, t = 90 min
ZnO-R2	a) T = 490 °C, P(O₂) = 5 × 10⁻⁵ Torr, O-plasma = 250 W, t = 60 min b) T = 370 °C, P(O₂) = 5 × 10⁻⁵ Torr, T(Zn) = 340 °C, t = 30 min c) T = 250 °C, P(O₂) = 5 × 10⁻⁵ Torr, O-plasma = 200 W, Zn = 340 °C, t = 5 min d) T = 490 °C, P(O₂) = 5 × 10⁻⁵ Torr, O-plasma = 200 W, Zn = 340 °C, t = 60 min

T temperature (°C), P oxygen partial pressure (mbar), plasma oxygen plasma power (W), t time (min)