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Fig. 1 | Nanoscale Research Letters

Fig. 1

From: Controlling Growth High Uniformity Indium Selenide (In2Se3) Nanowires via the Rapid Thermal Annealing Process at Low Temperature

Fig. 1

a Illustration of a two-zone quartz-tube furnace. The In2Se3 powder was used as a precursor and placed upstream in the middle of the tube at 800 °C, and SiO2/Si(100) coated with a 2.0 nm thick Au film was placed downstream and the argon gas as the carrier gas. b and c are the SEM images of In2Se3 nanowires which were grown on the substrate with and without the RTA process, respectively. d A typical XRD spectrum of the Au-catalyzed α-In2Se3 NWs. The lattice constants are a = 4.025 Å and c = 19.235 Å (JCPDS card, No. 34–1279)

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