Fig. 2From: Controlling Growth High Uniformity Indium Selenide (In2Se3) Nanowires via the Rapid Thermal Annealing Process at Low TemperatureSEM images of In2Se3 nanowires which were grown at a 550 °C, b 600 °C, and c 650 °C, respectively; the scale bars of the inset images (a–c) are 100 nm. d In2Se3 nanowires are grown with the precursor and growth temperature at 850 and 600 °C, respectivelyBack to article page