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Table 1 Comparison with other works in terms: growth temperature, precursor temperature, and nanowire diameters

From: Controlling Growth High Uniformity Indium Selenide (In2Se3) Nanowires via the Rapid Thermal Annealing Process at Low Temperature

Growth temperature (°C) Diameter (nm) RTA Precursor Precursor temperature (°C) Reference
650–700 40–80 × In2Se3 powder 900–950 [2]
690 80–200 × In2Se3 powder 940 [5]
690–740 150 × In2Se3 powder 920 [26]
690–740 50–200 × In2Se3 powder 920 [33]
690–740 50–200 × In2Se3 powder 930–950 [34]
550 70–150 ˅ In2Se3 powder 800 in this work
550 80–170 × In2Se3 powder 800 In this work