Controlling Growth High Uniformity Indium Selenide (In2Se3) Nanowires via the Rapid Thermal Annealing Process at Low Temperature

Table 1 Comparison with other works in terms: growth temperature, precursor temperature, and nanowire diameters

Growth temperature (°C)	Diameter (nm)	RTA	Precursor	Precursor temperature (°C)	Reference
650–700	40–80	×	In₂Se₃ powder	900–950	[2]
690	80–200	×	In₂Se₃ powder	940	[5]
690–740	150	×	In₂Se₃ powder	920	[26]
690–740	50–200	×	In₂Se₃ powder	920	[33]
690–740	50–200	×	In₂Se₃ powder	930–950	[34]
550	70–150	˅	In₂Se₃ powder	800	in this work
550	80–170	×	In₂Se₃ powder	800	In this work