Fig. 2From: Charge Splitting In Situ Recorder (CSIR) for Real-Time Examination of Plasma Charging Effect in FinFET BEOL ProcessesTime-to-breakdown (T BD) of n-channel and p-channel FinFETs stressed by positive, negative, and positive + negative charging on the gate electrodes. T BD of devices under different polarity stresses suggests that the damage accumulated on the gate dielectric depends not only on the charging polarity, but also the wells under corresponding FinFETsBack to article page