Charge Splitting In Situ Recorder (CSIR) for Real-Time Examination of Plasma Charging Effect in FinFET BEOL Processes

Table 1 Parameters in Eqs. (2)–(4) for estimating plasma charging current density during BEOL processes

Parameters	Definition	Unit
Q _FG	Floating gate charge	V
C _T	Total capacitance of the floating gate	F
ΔV _T	Threshold voltage shift	V
α _RG	Coupling ratio from the read gate
V _ANT	Antenna gate potential	V
V _FG	Floating gate potential	V
V _FB	Flat band voltage	V
α _ANT	Coupling ratio from antenna gate
J _p	Plasma charging current density	A/cm²
Δt	Plasma process duration	sec
C _ANT	Capacitance of the metal antenna	F
A _ANT	Area of the metal antenna	cm²