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Fig. 2 | Nanoscale Research Letters

Fig. 2

From: Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light-Sensitive Devices

Fig. 2

(Color online) room temperature PV spectra of the a metamorphic InAs/In0.15Ga0.85As and b InAs/GaAs QD structures; PV was measured contacted to only MBE layers [45] (black curves) and through the semi-insulating si-GaAs substrate (blue). The PV spectra measured through the si-GaAs substrate are inverted by sign of voltage below 1.68 and 1.44 eV respectively for a and b. Low-energy parts of the curves are given in the insets; the QD PL bands measured before [45] for both the structures are presented for the QD ground state energy positioning (red)

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