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Fig. 3 | Nanoscale Research Letters

Fig. 3

From: Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light-Sensitive Devices

Fig. 3

(Color online) calculated band profile in the metamorphic InAs/In0.15Ga0.85As (up) and pseudomorphic InAs/GaAs (down) structures, to explain the PV mechanism. The band bending of the deeper layers beneath the AuGeNi contact is indicated in gray. The optical transitions observed in the PV spectra are indicated by vertical arrows; bold arrows show drift directions of the optically excited charge carriers under the internal field (PV creation); E F is Fermi energy. The calculations were carried out using Tibercad software [50]

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