Fig. 5

(Color online) calculated band profiles near In_0.15Ga_0.85As/GaAs interfaces of the metamorphic structure grown on a si-substrate with the n ⁺-GaAs layer thickness of a 100 nm (present sample), b 100 nm and a 10-nm thin Ga_0.3Al_0.7As barrier layer, and c structure like the present but grown on a n ⁺-substrate doped similar to the 100-nm thick n ⁺-GaAs layer above. The calculations were carried out using Tibercad software [50]