Open Access

Correction to: Charge Splitting In Situ Recorder (CSIR) for Real-Time Examination of Plasma Charging Effect in FinFET BEOL Processes

  • Yi-Pei Tsai1Email author,
  • Ting-Huan Hsieh1,
  • Chrong Jung Lin1 and
  • Ya-Chin King1
Nanoscale Research Letters201712:584

https://doi.org/10.1186/s11671-017-2336-x

Published: 8 November 2017

The original article was published in Nanoscale Research Letters 2017 12:534

Correction

In the original publication [1] Fig. 3 was presented incorrect. The correct additional file has been included with this erratum and the original article has been updated to rectify this error.

Correction

In the original publication [1] Fig. 3 was presented incorrect. The correct additional file has been included with this erratum and the original article has been updated to rectify this error.
Fig. 3

a The plasma charging effect for the different metal layers varies on different locations across the wafer. b The positive and negative charges may compensate each other in the stacked metal layers

Notes

Declarations

Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

Authors’ Affiliations

(1)
National Tsing Hua University

Reference

  1. Tsai Y-P (2017) Charge splitting in situ recorder (CSIR) for real-time examination of plasma charging effect in FinFET BEOL processes. Nanoscale Res Lett 12:534 doi:10.1186/s11671-017-2309-0

Copyright

© The Author(s). 2017

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