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Correction to: Charge Splitting In Situ Recorder (CSIR) for Real-Time Examination of Plasma Charging Effect in FinFET BEOL Processes

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The original article was published in Nanoscale Research Letters 2017 12:534

Correction

In the original publication [1] Fig. 3 was presented incorrect. The correct additional file has been included with this erratum and the original article has been updated to rectify this error.

Fig. 3
figure1

a The plasma charging effect for the different metal layers varies on different locations across the wafer. b The positive and negative charges may compensate each other in the stacked metal layers

Reference

  1. 1.

    Tsai Y-P (2017) Charge splitting in situ recorder (CSIR) for real-time examination of plasma charging effect in FinFET BEOL processes. Nanoscale Res Lett 12:534 doi:10.1186/s11671-017-2309-0

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Correspondence to Yi-Pei Tsai.

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The original article can be found online at https://doi.org/10.1186/s11671-017-2309-0.

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Open Access This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

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Tsai, Y., Hsieh, T., Lin, C.J. et al. Correction to: Charge Splitting In Situ Recorder (CSIR) for Real-Time Examination of Plasma Charging Effect in FinFET BEOL Processes. Nanoscale Res Lett 12, 584 (2017) doi:10.1186/s11671-017-2336-x

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