Correction
In the original publication [1] Fig. 3 was presented incorrect. The correct additional file has been included with this erratum and the original article has been updated to rectify this error.
a The plasma charging effect for the different metal layers varies on different locations across the wafer. b The positive and negative charges may compensate each other in the stacked metal layers
Reference
Tsai Y-P (2017) Charge splitting in situ recorder (CSIR) for real-time examination of plasma charging effect in FinFET BEOL processes. Nanoscale Res Lett 12:534 doi:10.1186/s11671-017-2309-0
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The original article can be found online at https://doi.org/10.1186/s11671-017-2309-0.
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Tsai, YP., Hsieh, TH., Lin, C.J. et al. Correction to: Charge Splitting In Situ Recorder (CSIR) for Real-Time Examination of Plasma Charging Effect in FinFET BEOL Processes. Nanoscale Res Lett 12, 584 (2017). https://doi.org/10.1186/s11671-017-2336-x
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DOI: https://doi.org/10.1186/s11671-017-2336-x