Fig. 2
From: Bias-dependent photoresponsivity of multi-layer MoS2 phototransistors
Photoresponse characteristics of MoS2 phototransistors depending on illuminated light intensity. a Transfer characteristics with a constant V DS = 3 V under illumination with three different intensities of light (5, 7, and 10 mW/cm2). b Change in photocurrent with increase in intensity of light when different drain biases (V DS = 9, 15 V) and a constant gate bias (V GS = − 30 V) are applied