Table 1 Growth parameters of GeBi films
From: Preparation and Optical Properties of GeBi Films by Using Molecular Beam Epitaxy Method
Sample no. | Injection temperature | Substrate temperature (°C) | Ge1-xBix |
|---|---|---|---|
1 | 1200 °C/400 °C | 150 | Ge0.980Bi0.020 |
2 | 1200 °C/425 °C | 150 | Ge0.898Bi0.102 |
3 | 1200 °C/450 °C | 150 | Ge0.817Bi0.183 |
4 | 1200 °C/475 °C | 150 | Ge0.797Bi0.203 |
5 | 1200 °C/500 °C | 150 | Ge0.778Bi0.222 |