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Table 1 Growth parameters of GeBi films

From: Preparation and Optical Properties of GeBi Films by Using Molecular Beam Epitaxy Method

Sample no. Injection temperature Substrate temperature (°C) Ge1-xBix
1 1200 °C/400 °C 150 Ge0.980Bi0.020
2 1200 °C/425 °C 150 Ge0.898Bi0.102
3 1200 °C/450 °C 150 Ge0.817Bi0.183
4 1200 °C/475 °C 150 Ge0.797Bi0.203
5 1200 °C/500 °C 150 Ge0.778Bi0.222