Fig. 4From: Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film TransistorsHigh resolution a C 1s, b In 3d, and c O 1 s XPS spectra of the In2O3 films deposited at 160, 180, and 200 °C, respectively. To remove adventitious surface contaminants, all the samples were etched with in-situ Ar ion bombardment for 6 min before signal collectionBack to article page