Table 2 Characteristics of the ALD In2O3 Films and In2O3 TFTs From Different Groups
From: Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors
Oxygen Precursor | Metal Precursor | Deposition Temperature (°C) | Growth rate (Å/cycle) | Channel Thickness (nm) | μ (cm2/V·s) | VTH (V) | ION/IOFF | SS (V/dec) | Ref. |
|---|---|---|---|---|---|---|---|---|---|
H2O | Et2InN(TMS)2a | 175~250 | 0.7 | – | – | – | – | – | [23] |
H2O | DMLDMInb | 300~350 | 0.6 | – | – | – | – | – | [33] |
O2 plasma | Et2InN(SiMe3)2c | 250 | 1.45 | 5 | 39.2 | −1.18 | – | 0.27 | [34] |
H2O | TMInd | 200~251 | 0.39 | – | – | – | – | – | [35] |
H2O2 | InCA-1e | 125 | 0.6 | 18 | 15 | −0.2 | 108 | – | [36] |
H2O2 | InCA-1e | 150 | 0.6 | 18 | 9.8 | −0.2 | 109 | 0.63 | [37] |
H2O2 | InCp | 160 | 1.46 | 20 | 7.8 | −3.7 | 107 | 0.32 | This work |