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Table 2 Characteristics of the ALD In2O3 Films and In2O3 TFTs From Different Groups

From: Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors

Oxygen Precursor Metal Precursor Deposition Temperature (°C) Growth rate (Å/cycle) Channel Thickness (nm) μ (cm2/V·s) VTH (V) ION/IOFF SS (V/dec) Ref.
H2O Et2InN(TMS)2a 175~250 0.7 [23]
H2O DMLDMInb 300~350 0.6 [33]
O2 plasma Et2InN(SiMe3)2c 250 1.45 5 39.2 −1.18 0.27 [34]
H2O TMInd 200~251 0.39 [35]
H2O2 InCA-1e 125 0.6 18 15 −0.2 108 [36]
H2O2 InCA-1e 150 0.6 18 9.8 −0.2 109 0.63 [37]
H2O2 InCp 160 1.46 20 7.8 −3.7 107 0.32 This work
  1. aEt2InN(TMS)2 represents the diethyl [bis (trimethylsilyl) amido]- indium
  2. bDMLDMIn represents the dimethylamino-dimethylindium
  3. cEt2InN(SiMe3)2 represents the diethyl [bis (trimethylsilyl) amido] indium
  4. dTMIn represents the trimethyl indium
  5. eInCA-1 represents the [1,1,1-trimethyl-N-(trimethylsilyl) silanaminato]-Indium