Nanoscale Research Letters

Table 3 The Elemental Percentages of In₂O₃ Films Annealed at 300 °C in Air for Different Time

From: Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors

Annealing time	C	In	O	In:O
2 h	5.9%	42.4%	51.7%	1:1.22
7 h	6.2%	41.6%	52.2%	1:1.25
10 h	6.3%	39.8%	53.9%	1:1.35
11 h	4.8%	38.4%	56.8%	1:1.48

All the films were deposited at 160 °C and etched with in-situ Ar ion bombardment

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