Table 3 The Elemental Percentages of In2O3 Films Annealed at 300 °C in Air for Different Time
From: Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors
Annealing time | C | In | O | In:O |
|---|---|---|---|---|
2 h | 5.9% | 42.4% | 51.7% | 1:1.22 |
7 h | 6.2% | 41.6% | 52.2% | 1:1.25 |
10 h | 6.3% | 39.8% | 53.9% | 1:1.35 |
11 h | 4.8% | 38.4% | 56.8% | 1:1.48 |