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Table 3 The Elemental Percentages of In2O3 Films Annealed at 300 °C in Air for Different Time

From: Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors

Annealing time C In O In:O
2 h 5.9% 42.4% 51.7% 1:1.22
7 h 6.2% 41.6% 52.2% 1:1.25
10 h 6.3% 39.8% 53.9% 1:1.35
11 h 4.8% 38.4% 56.8% 1:1.48
  1. All the films were deposited at 160 °C and etched with in-situ Ar ion bombardment