Fig. 12From: A Collective Study on Modeling and Simulation of Resistive Random Access Memorya, b Experimental I (V) characteristics for Electroforming, Set, and Reset processes measured on a large number of memory elements to understand the device-to-device variability. The experimental device-to-device variability is accounted for in Monte Carlo simulations with a ± 5% standard deviation on parameters α and L x [21]Back to article page