Fig. 17From: A Collective Study on Modeling and Simulation of Resistive Random Access MemoryConducting AFM (C-AFM) topographs of TiO2 films. a Schematic of C-AFM measurements (b) Typical I-V curves of TiO2 films using C-AFM tip as a top electrode. c At Vtip = 8 V, mapping of the current flow through the surface just after the forming operationshows locally distributed conducting regions. d TiO2 surface in the HRS shows locally distributed conducting regions disappear after reset operation with Vtip = 1 V [182]Back to article page