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Table 1 Comparative analysis of the models

From: A Collective Study on Modeling and Simulation of Resistive Random Access Memory

Model Device type State variable Control mechanism Threshold exists Supports boundary effects Simulation compatible
Chua model [1, 2] Generic Flux or charge Current NA NA NA
Linear ion drift [3] Bipolar 0 ≤ w ≤ D
Doped region physical width
Current No External window functions Possible with SPICE
Non-linear ion drift [46, 68] Bipolar 0 ≤ w ≤ 1
Doped region normalized width
Voltage No External window functions No
Exponential [69] Bipolar Switching speed Voltage No Yes No
Simmons tunneling barrier [70,71,72] Bipolar aoff ≤ w ≤ aon
Undoped region width
Current No No SPICE
Yakopcic [73, 74] Bipolar 0 ≤ w ≤ 1
Not explained physically
Voltage Yes External window functions SPICE/Verilog/MAPP
TEAM [75, 76] Bipolar xon ≤ x ≤ xoff
Undoped region width
Current Current Implicit window functions SPICE/Verilog/MAPP
VTEAM [77] Bipolar xon ≤ x ≤ xoff
Undoped region width
Voltage Voltage Implicit window functions SPICE/Verilog/MAPP
ASU/Stanford [78,79,80,81] Bipolar Filament gap (g) Voltage Temperature No SPICE/Verilog/MAPP
Filament dissolution [82,83,84,85,86] Unipolar Concentration of ions Voltage Temperature No COMSOL
Physical electro thermal [87] Bipolar Concentration of ions Voltage Temperature Practically yes COMSOL
Bocquet unipolar [90] Unipolar Concentration of ions Voltage Temperature Yes COMSOL/SPICE
Bocquet bipolar [91, 92] Bipolar CF radius Voltage Temperature Yes SPICE
Gonzalez-Cordero [93] Bipolar CF radius (top and bottom) Voltage Temperature Yes SPICE