Table 3 Improved I-V relationships of the various models
From: A Collective Study on Modeling and Simulation of Resistive Random Access Memory
Model | Original I-V relationship (f1) | Improved I-V using concepts from Wang and Roychowdhury100 |
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Linear ion drift [3] | f1 = (RON × s + Roff × (1 − s))−1 × vpn | Can have division by zero error when s = Roff/(Ron/Roff). Modified equation: y = smoothclip(s − Roff/(Ron − Roff), smoothing) + Roff/(Ron − Roff) Then, f1 = (Ron × y + Roff × (1 − y))−1 × vpn |
I = snβ sinh(α × vpn) + χ(exp(γ × vpn) − 1) | sinh can be changed to safesinh(), exponential function to safeexp() | |
\( I(t)=\left\{\begin{array}{c}{A}_1\times s\times \sinh (Bvpn),\kern0.5em vpn\ge 0\\ {}{A}_2\times s\times \sinh (Bvpn),\kern2.25em vpn<0\end{array}\right. \) | sinh is changed to safesinh(). The function is then smoothed. f1p = A1 × s × safesinh(B × vpn, maxslope) f1n = A2 × s × safesinh(B × vpn, maxslope) f1 = smoothswitch(f1n, f1p, vpn, smoothing) | |
\( v(t)={R}_{\mathrm{ON}}{e}^{\left(\lambda /{x}_{\mathrm{off}}-{x}_{\mathrm{on}}\right)\left(x-{x}_{\mathrm{on}}\right)}\times i(t) \) | The exponential function is changed to safeexp() | |
\( I\left(g,V\right)={I}_0\exp \left(\frac{-g}{g_0}\right)\sinh \left(\frac{V}{V_0}\right) \) | The gap is expressed using s: gap = s × min gap + (1 − s) × maxgap Then sinh is changed to safesinh(), exponential function to safeexp() |