Fig. 2From: Effects of Asymmetric Local Joule Heating on Silicon Nanowire-Based Devices Formed by Dielectrophoresis Alignment Across Pt Electrodesa Top-view and b cross-sectional SEM images of Si NW arrays fabricated by MACE combined with NSL. c TEM image of as-synthesized Si NW. d Atomic resolution TEM image of as-synthesized Si NW corresponds to the red square in c. The inset is the SAD patterns of Si NWBack to article page