Fig. 8
a Schematic of a Si NW-based sensor under white light illumination with the intensity of 825 mW/cm2. b I-V curves of a Si NW-based sensor under the dark and white light illumination. The inset shows the corresponding I-V properties in a semi-logarithmic scale. c Time-resolved photoresponse of a Si NW-based sensor at + 0.75 V in forward-biased mode under white light illumination by switching on and off. d Time-resolved photoresponse of a Si NW-based sensor at − 0.75 V in reverse-biased mode under white light illumination by switching on and off. The prepared device was the same as that for conduct electrical transport property measurement in Fig. 5a, b