Fig. 1
2D-3D transition moment determination during the GeSiSn film growth: a RHEED pattern from the Si(100)-(2 × 1) surface before the Ge0.6Si0.28Sn0.12 growth is shown, b the space-time intensity distribution of the vertical profile in the gray scale and the intensity dependence of the horizontal profile on the deposited Ge0.6Si0.28Sn0.12 film thickness. The profiles are indicated by the arrows in (a) and (b), and c the final RHEED pattern after the 1.91-nm-thick Ge0.6Si0.28Sn0.12 deposition