Fig. 5From: Morphology, Structure, and Optical Properties of Semiconductor Films with GeSiSn Nanoislands and Strained LayersSTM images of the Ge0.75Si0.2Sn0.05 surface with the scan size of 400 nm × 400 nm: a the Ge0.75Si0.2Sn0.05 surface in the first period, b the Ge0.75Si0.2Sn0.05 surface in the fifth period; the distribution histograms for the number of islands on the size of the base for the Ge0.75Si0.2Sn0.05 film: c in the first period (the Ge0.75Si0.2Sn0.05 film thickness equals 1.78 nm) and d in the fifth period (the Ge0.75Si0.2Sn0.05 film thickness equals 1.89 nm)Back to article page